Effect of Post-metallization Annealing for Alternative Gate Stack Devices
نویسندگان
چکیده
منابع مشابه
Effect of Post Metallization Annealing for Alternative Gate Stack Devices
To meet the gate leakage specifications in the International Technology Roadmap for Semiconductors (ITRS), an intensive search is being conducted for alternative gate stack materials. Most of the studies have focused on basic material properties, but very little effort has been directed towards quantifying and understanding the effect of post metallization annealing (PMA) on the electrical prop...
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ژورنال
عنوان ژورنال: Journal of The Electrochemical Society
سال: 2004
ISSN: 0013-4651
DOI: 10.1149/1.1636181